HC2M0080120K
1+ |
¥26.100205
|
10+ |
¥25.478715
|
30+ |
¥25.07107
|
90+ |
¥24.652975
|
数量 |
|
详情
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
属性 |
参数值 |
Id-漏极电流(25℃) |
36A |
Vds-漏源击穿电压 |
1200V |