中文(USD)
中文(RMB)
English(USD)
HC2M1000170D
| 1+ |
$2.582195
|
| 10+ |
$2.255205
|
| 30+ |
$2.016185
|
| 90+ |
$1.819725
|
| 510+ |
$1.72881
|
| 990+ |
$1.68777
|
| 数量 |
|
详情
TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
属性 |
参数值 |
|
Pd-功耗 |
69W |
|
Id-漏极电流(25℃) |
5A |
|
Vds-漏源击穿电压 |
1700V |
